Telecentric fθ lens specifications for laser exposure equipment
High-precision beam shape rendering is possible across the entire scanning width with telecentric fθ lenses and polygon mirrors using "raster scan type laser exposure."
This is a "laser exposure machine" that directly exposes positive and negative resists without a mask for pattern formation of insulating films, metal patterns, and the formation of banks and partitions in MEMS shapes related to printed electronics. It enables high-precision beam shape drawing across the entire scanning width through "raster scan type laser exposure" using a telecentric fθ lens and a polygon mirror. Laser wavelengths such as 375, 405, 650, 780, and 830 nm, including h-line and i-line, are selectable. Laser spot diameters of 2 μm (@405 nm), 10 μm, 22 μm, 30 μm, etc. Resolution options include up to 25,400 dpi, 5,080 dpi, and 3,000 dpi, among others. It can accommodate a wide range of photosensitive resists, including various semiconductor exposure resists, polyimide resists, and photosensitive Ag. Electrode formation can be achieved using organic TFT gate insulating films, photosensitive Ag inks, etc. Creating complex pattern shapes that are difficult with inkjet, flexo, or screen methods is made easy.
- Company：ワイ・ドライブ
- Price：10 million yen-50 million yen
